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| HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Unit: mm Q1 (transistor) Q2 (S-MOS) : 2SA1955 equivalent : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating -15 -12 -5 -400 -50 Unit V V V mA mA US6 JEDEC JEITA TOSHIBA 1.EMITTER 2.BASE 3.DRAIN 4.SOURCE 5.GATE 6.COLLECTOR 2-2J1E Weight: 6.8 mg (typ.) Q2 Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 100 Unit V V mA Q1, Q2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg Rating 200 125 -55~125 Unit mW C C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. 1 2007-11-01 HN7G03FU Q1 Electrical Characteristics (Ta = 25C) Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO hFE (Note 1) VCE(sat) (1) VCE(sat) (2) VBE(sat) Test Circuit Test Condition VCB =- 15 V, IE = 0 VEB =- 5 V, IC = 0 VCE =- 2 V, IC =- 10 mA IC =- 10 mA, IB =- 0.5 mA IC =- 200 mA, IB =- 10 mA IC =- 200 mA, IB =- 10 mA Min 300 Typ. -15 -110 -0.87 Max -0.1 -0.1 1000 -30 -250 -1.2 mV V Unit A A Note 1: hFE classification A: 300~600, B: 500~1000 Q2 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain-source breakdown voltage Drain current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Gate-source ON-resistance Symbol IGSS V(BR) DSS IDSS Vth | Yfs | RDS(ON) RGS Test Circuit Test Condition VGS = 10 V, VDS = 0 ID = 100 A, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 2.5 V VGS = 0 ~ 10 V Min 20 0.7 25 0.7 Typ. 50 4 1.0 Max 15 1 1.3 12 1.3 Unit A V A V mS M Marking Type Name hFE Rank Equivalent Circuit (Top View) 6 5 4 8A Q1 Q2 1 2 3 2 2007-11-01 HN7G03FU Q1 3 2007-11-01 HN7G03FU Q2 ID - VDS 100 2.5 100 2.0 COMMON SOURCE Ta = 25C 80 1.9 60 1.8 40 4.0 2.5 2.2 2.0 ID - VDS (LOW-VOLTAGE REGION) (mA) (mA) 80 COMMON SOUCE Ta = 25C 60 1.8 40 DRAIN CURRENT ID 1.7 1.6 DRAIN CURRENT ID 1.6 20 VGS = 1.4 V 0 0 0.2 0.4 0.6 0.8 1.0 20 VGS = 1.4 V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) IDR - VDS (mA) 100 COMMOM SOURCE VGS = 0 Ta = 25C D 1000 COMMON SOURCE VDS = 3 V 100 ID - VGS DRAIN REVERSE CURRENT IDR 10 DRAIN CURRENT ID (mA) G 1 S 0.1 IDR 10 Ta = 100C 1 25C -25C 0.1 0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0.01 0 0.5 1 1.5 2 2.5 3 DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) Yfs - ID FORWARD TRANSFER ADMITTANCE Yfs (mS) 300 COMMON SOURCE VDS = 3 V Ta = 25C 100 100 COMMON SOURCE 50 30 VGS = 0 f = 1 MHz Ta = 25C C - VDS 50 30 CAPACITANCE C (pF) 10 5 3 Ciss Coss 10 Crss 1 0.1 5 1 3 5 10 30 50 100 0.3 1 3 10 30 DRAIN CURRENT ID (mA) DRAIN-SOURCE VOLTAGE VDS (V) 4 2007-11-01 HN7G03FU Q2 5 2007-11-01 HN7G03FU Q1, Q2 common P* - Ta 400 POWER DISSIPATION P (mW) 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (C) *:Total rating 6 2007-11-01 HN7G03FU RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-11-01 |
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